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LT6A01-LT6A07
Vishay Lite-On Power Semiconductor
6.0A Rectifier
Features
D Diffused junction D High current capability and low
forward voltage drop
D Surge overload rating to 400A peak D Low reverse leakage current D Plastic material - UL Recognition
flammability classification 94V-0
14 424
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type LT6A01 LT6A02 LT6A03 LT6A04 LT6A05 LT6A06 LT6A07 Symbol VRRM =VRWM =VR V Value 50 100 200 400 600 800 1000 400 6 -65...+150 Unit V V V V V V V A A C
Peak forward surge current Average forward current TA=60C Junction and storage temperature range
IFSM IFAV Tj=Tstg
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Thermal resistance junction to ambient Test Conditions IF=6A TA=25C TA=100C VR=4V, f=1MHz Type Symbol Min Typ VF IR IR CD 140 CD 70 RthJA 15 Max 1 10 1 Unit V
mA
mA pF pF K/W
LT6A01-04 LT6A05-07
Rev. A2, 24-Jun-98
1 (4)
LT6A01-LT6A07
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFAV - Average Forward Current ( A ) 8 7 6 5 4 3 2 1 0 0
15587
IFSM - Peak Forward Surge Current ( A )
500 400
300
200
100
8.3 ms Single Half-Sine-Wave JEDEC method
0 1 10 Number of Cycles at 60 Hz 100
25
50
75 100 125 150 175 200
15589
Tamb - Ambient Temperature ( C )
Figure 1. Max. Average Forward Current vs. Ambient Temperature
100
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
1000
Tj = 25C
C D - Diode Capacitance ( pF )
f = 1 MHz
IF - Forward Current ( A )
10
LT6A01 - LT6A04
100
LT6A05 - LT6A07
1.0
Tj = 25C IF Pulse Width = 300 s 2% Duty Cycle
0.1 0
15588
10 0.2 0.6 1.0 1.4 1.8
15590
1
10 VR - Reverse Voltage ( V )
100
VF - Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
LT6A01-LT6A07
Vishay Lite-On Power Semiconductor Dimensions in mm
14448
Case: molded plastic Polarity: cathode band Approx. weight: 2.1 grams Mounting position: any Marking: type number
Rev. A2, 24-Jun-98
3 (4)
LT6A01-LT6A07
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98

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